maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 70 v continuous forward current i f 15 ma forward surge current, tp=1.0 s i fsm 50 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =50v 98 200 na bv r i r =10 a70 v v f i f =1.0ma 395 410 mv c t v r =0v, f=1.0 mhz 2.0 pf cmpd6263 cmpd6263a cmpd6263c cmpd6263s surface mount silicon schottky diodes sot-23 case central semiconductor corp. tm r5 (6-august 2003) description: the central semiconductor cmpd6263 series types are silicon schottky diodes designed for low current surface mount fast switching applicaitons requiring a low forward voltage drop. the following configurations are available: cmpd6263 single marking code: d76 cmpd6263a dual, common anode marking code: d98 cmpd6263c dual, common cathode marking code: d97 cmpd6263s dual, in series marking code: d96
central semiconductor corp. tm sot-23 case - mechanical outline cmpd6263 cmpd6263a cmpd6263c cmpd6263s surface mount silicon schottky diodes r5 (6-august 2003) marking code: d97 marking code: d96 marking code: d76 marking code: d98 2 3 1 d1 d2 2 3 1 d1 d2 2 3 1 d1 d2 2 3 1 lead code: cmpd6263 1) anode 2) no connection 3) cathode lead code: cmpd6263a 1) cathode d2 2) cathode d1 3) anode d1, anode d2 lead code: cmpd6263c 1) anode d2 2) anode d1 3) cathode d1, cathode d2 lead code: cmpd6263s 1) anode d2 2) cathode d1 3) anode d1, cathode d2
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